SSM3K14T Datasheet (Toshiba Semiconductor) - TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII)

SSM3K14T, TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII)

SSM3K14T TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII) SSM3K14T DC-DC Converter High Speed Switching Applications Small Package Low ON-resistance: Ron = 39 mΩ (max) (@VGS = 10 V) : Ron = 57 mΩ (max) (@VGS = 4.5 V) High speed: ton = 24 ns (typ.) : toff = 19 ns (typ.) Unit: mm Maximum Ratings (Ta = 25°C) Characteristic Drain-Source voltage Gate-Source voltage Drain current DC Pulse Symbol VDS VGSS ID IDP (Note 2) PD (Note 1) t = 10 s Tch Tstg Rating 30 ±2