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TIM5964-60SL Datasheet - Toshiba Semiconductor

TIM5964-60SL_ToshibaSemiconductor.pdf

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Datasheet Details

Part number:

TIM5964-60SL

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

418.52 KB

Description:

Microwave power gaas fet.

TIM5964-60SL, MICROWAVE POWER GaAs FET

TIM5964-60SL Features

* ･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER P1dB= 48.0dBm at 5.9GHz to 6.4GHz ･HIGH GAIN G1dB= 8.5dB at 5.9GHz to 6.4GHz ･LOW INTERMODULATION DISTORTION IM3= -45dBc at Pout= 36.5dBm Single Carrier Level ･HERMETICALLY SEALED PACKAGE MICROWAVE POWER GaAs FET TIM5964-60SL RF PERFORMANCE SPECIFICAT

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📌 All Tags

TIM5964-60SL MICROWAVE POWER GaAs FET Toshiba Semiconductor
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