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TIM5964-6UL

MICROWAVE POWER GaAs FET

TIM5964-6UL Features

* HIGH POWER P1dB=38.5dBm at 5.9GHz to 6.4GHz

* HIGH GAIN G1dB=10.0dB at 5.9GHz to 6.4GHz

* BROAD BAND INTERNALLY MATCHED FET

* HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS CHARACTERISTICS Output Power at 1dB Gain Compression Point Power Gain at 1dB Gain

TIM5964-6UL Datasheet (194.02 KB)

Preview of TIM5964-6UL PDF

Datasheet Details

Part number:

TIM5964-6UL

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

194.02 KB

Description:

Microwave power gaas fet.

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TAGS

TIM5964-6UL MICROWAVE POWER GaAs FET Toshiba Semiconductor

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