TK1P90A Datasheet - Toshiba Semiconductor

TK1P90A, Silicon N-Channel MOSFET

TK1P90A MOSFETs Silicon N-Channel MOS (π-MOS) TK1P90A 1.Applications * Switching Voltage Regulators 2..

Features

* (1) (2) (3) (4) Low drain-source on-resistance: RDS(ON) = 6.7 Ω (typ. ) High forward transfer admittance: |Yfs| = 1.0 S (typ. ) Low leakage current: IDSS = 100 µA (max) (VDS = 720 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit 1: Gate (G) 2: Drain (

TK1P90A-ToshibaSemiconductor.pdf