TK2P60D Datasheet (Toshiba Semiconductor)

TK2P60D, Silicon N-Channel MOSFET

TK2P60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK2P60D Switching Regulator Applications Low drain-source ON-resistance: RDS (ON) = 3.3 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 1.0 S (typ.) Low leakage current: IDSS = 10 μA (VDS = 600 V) Enhancement-mode: Vth = 2.4 to 4.4 V (VDS = 10 V, ID = 1 mA) 1.5 ± 0.2 6.5 ± 0.2 5.2 ± 0.2 Unit: mm 0.6 MAX.

5.5 ± 0.2 9.5 ± 0.3 1.2 MAX.

Absolute Maximum Ratings (Ta = 25°C) C