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TK2P60D Datasheet - Toshiba Semiconductor

TK2P60D Silicon N-Channel MOSFET

TK2P60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK2P60D Switching Regulator Applications Low drain-source ON-resistance: RDS (ON) = 3.3 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 1.0 S (typ.) Low leakage current: IDSS = 10 μA (VDS = 600 V) Enhancement-mode: Vth = 2.4 to 4.4 V (VDS = 10 V, ID = 1 mA) 1.5 ± 0.2 6.5 ± 0.2 5.2 ± 0.2 Unit: mm 0.6 MAX. 5.5 ± 0.2 9.5 ± 0.3 1.2 MAX. Absolute Maximum Ratings (Ta = 25°C) C.

TK2P60D Datasheet (210.42 KB)

Preview of TK2P60D PDF

Datasheet Details

Part number:

TK2P60D

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

210.42 KB

Description:

Silicon n-channel mosfet.

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