TPC6067 Datasheet, Mosfets, Toshiba Semiconductor

Mosfets

TPC6067

Toshiba ↗ Semiconductor

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Mosfets.
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(1) (2) (3) (4) Small, thin package Low drain-source on-resistance: RDS(ON) = 18 mΩ (typ.) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) Enhancement m

Lithium-Ion Secondary Batteries Power Management Switches 2. Features (1) (2) (3) (4) Small, thin packa

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TPC6067 MOSFETs Toshiba Semiconductor