1SS419 Silicon Diode

Toshiba

Description

TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS419 High-Speed Switching Applications 1SS419 Unit: mm CATHODE MARK * Small package.

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Datasheet Specifications

Part number: 1SS419
Manufacturer: Toshiba ↗
File Size: 117.21 KB
Datasheet: 1SS419-Toshiba.pdf
Description: Silicon Diode

Applications

* 1SS419 Unit: mm CATHODE MARK
* Small package
* Low forward voltage: VF (3) = 0.56 V (typ. )
* Low reverse current: IR = 5 μA (max) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse voltage VRM 45 V sESC Reverse voltage V

1SS419 Distributors

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1SS419 Silicon Diode Toshiba

Toshiba 1SS419-like datasheet