1SS419 Datasheet - Toshiba

1SS419 Silicon Diode

TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS419 High-Speed Switching Applications 1SS419 Unit: mm CATHODE MARK Small package Low forward voltage: VF (3) = 0.56 V (typ.) Low reverse current: IR = 5 μA (max) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse voltage VRM 45 V sESC Reverse voltage VR 40 V Maximum (peak) forward current IFM 200 mA Average forward current Surge current (10 ms) Power di.

1SS419-Toshiba.pdf