1SS419 - Silicon Diode

Toshiba

Datasheet Details

Part number	1SS419
Manufacturer	Toshiba
File Size	117.21 KB
Description	Silicon Diode
Datasheet	1SS419 Datasheet
Additional preview pages of the 1SS419 datasheet.

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TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS419 High-Speed Switching Applications 1SS419 Unit: mm CATHODE MARK • Small package • Low forward voltage: VF (3) = 0.56 V (typ.) • Low reverse current: IR = 5 μA (max) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse voltage VRM 45 V sESC Reverse voltage VR 40 V Maximum (peak) forward current IFM 200 mA Average forward current Surge current (10 ms) Power dissipation IO IFSM P* 100 mA 1A 100 mW Junction temperature Tj 125 °C Storage temperature range Tstg −55~125 °C JEDEC ― Operating temperature range Topr −40~100 °C JEITA ― Note: Using continuously under heavy loads (e.g.

Published: May 28, 2016 |