* High DC Current Gain : hFE=2000(Min. ) (VCE=-3V,I C=-3A)
* Low Saturation Voltage : Vc E ( sa t)=-1.5V(Max. ) (Ic=-3A)
* Complementary to 2SD633, 2SD634 and 2SD635. INDUSTRIAL APPLICATIONS Unit in mm 10.3MAX. £to.6±0.2 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-B
2SB673
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Silicon pnp transistor.
: B673" 2SB674 2SB675I SILICON PNP EPITAXIAL TYPE (PCT PROCESS) (DARLINGTON POWER) HIGH POWER SWITCHING APPLICATIONS. HAMMER DRIVE, PULSE MOTOR DRIV.
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