* High DC Current Gain : hFE=2000 (Min.) (vCE=-2V, I C=-1A) INDUSTRIAL APPLICATIONS Unit in mm 10.3MAX., 03.6±O.2 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation (Tc-25°C) Junction
2SB676
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Silicon pnp transistor.
SILICON PNP EPITAXIAL TYPE (PCT PROCESS) (DARLINGTON POWER) SWITCHING APPLICATIONS. HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS. POWER AMPLIFIER APP.
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