High DC Current Gain : hFE=2000 (Min.) (vCE=-2V, I C=-1A)
INDUSTRIAL APPLICATIONS Unit in mm
10.3MAX., 03.6±O.2
MAXIMUM RATINGS (Ta=25°C)
CHARACTERISTIC Collector-Bas
✔ 2SB676 Application
HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS. POWER AMPLIFIER APPLICATIONS. FEATURES
2SB674, INCHANGE
isc Silicon PNP Darlington Power Transistor
2SB674
DESCRIPTION ·High DC Current Gain
: hFE= 2000(Min.) @IC= 3.0A ·Low Saturation Voltage
: VCE(sat)=.
2SB675, INCHANGE
isc Silicon PNP Darlington Power Transistor
2SB675
DESCRIPTION ·High DC Current Gain
: hFE= 2000(Min.) @IC= 3.0A ·Low Saturation Voltage
: VCE(sat)=.
