Datasheet4U Logo Datasheet4U.com

2SB676 Datasheet - Toshiba

2SB676 Silicon PNP Transistor

2SB676 Features

* High DC Current Gain : hFE=2000 (Min.) (vCE=-2V, I C=-1A) INDUSTRIAL APPLICATIONS Unit in mm 10.3MAX., 03.6±O.2 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation (Tc-25°C) Junction

2SB676 Datasheet (120.82 KB)

Preview of 2SB676 PDF
2SB676 Datasheet Preview Page 2 2SB676 Datasheet Preview Page 3

Datasheet Details

Part number:

2SB676

Manufacturer:

Toshiba ↗

File Size:

120.82 KB

Description:

Silicon pnp transistor.

📁 Related Datasheet

2SB673 PNP Transistor (INCHANGE)

2SB673 Silicon PNP Transistor (Toshiba)

2SB673 SILICON POWER TRANSISTOR (SavantIC)

2SB674 PNP Transistor (INCHANGE)

2SB674 Silicon PNP Transistor (Toshiba)

2SB674 SILICON POWER TRANSISTOR (SavantIC)

2SB675 PNP Transistor (INCHANGE)

2SB675 Silicon PNP Transistor (Toshiba)

TAGS

2SB676 Silicon PNP Transistor Toshiba

2SB676 Distributor