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2SB676 Datasheet - Toshiba

2SB676 Silicon PNP Transistor

2SB676 Features

* High DC Current Gain : hFE=2000 (Min.) (vCE=-2V, I C=-1A) INDUSTRIAL APPLICATIONS Unit in mm 10.3MAX., 03.6±O.2 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation (Tc-25°C) Junction

2SB676_Toshiba.pdf

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Datasheet Details

Part number:

2SB676

Manufacturer:

Toshiba ↗

File Size:

120.82 KB

Description:

Silicon pnp transistor.

2SB676 Distributor

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2SB676 2SB676 Silicon PNP Transistor Toshiba