* High DC Current Gain : h FE =2000 (Min.) (vCE=-2V, I C=-1A) Low Saturation Voltage VCE (satr-1 - 57 Max ( -> (i c = - 2A) INDUSTRIAL APPLICATIONS Unit in mm 10.3MAX,, 03.6±O.2 MAXIMUM RATINGS (Ta=25°c) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Vo
2SB677
121.65 KB
Silicon pnp transistor.
SILICON PNP EPITAXIAL TYPE (PCT PROCESS) (DARLINGTON POWER)
SWITCHING APPLICATIONS.
HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS. POWER AMPLIFIER AP.
📁 Related Datasheet
2SB673 - PNP Transistor
(INCHANGE)
isc Silicon PNP Darlington Power Transistor
2SB673
DESCRIPTION ·High DC Current Gain-
: hFE = 2000(Min)@ IC= -3A ·Collector-Emitter Breakdown Voltag.
2SB673 - Silicon PNP Transistor
(Toshiba)
:
B673
2SB674
2SB675I
SILICON PNP EPITAXIAL TYPE (PCT PROCESS) (DARLINGTON POWER)
HIGH POWER SWITCHING APPLICATIONS. HAMMER DRIVE, PULSE MOTOR DRIV.
2SB673 - SILICON POWER TRANSISTOR
(SavantIC)
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Product Specification
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2SB673
DESCRIPTION ·With TO-220C package ·DARLINGTO.
2SB674 - PNP Transistor
(INCHANGE)
isc Silicon PNP Darlington Power Transistor
2SB674
DESCRIPTION ·High DC Current Gain
: hFE= 2000(Min.) @IC= 3.0A ·Low Saturation Voltage
: VCE(sat)=.
2SB674 - Silicon PNP Transistor
(Toshiba)
:
B673
2SB674
2SB675I
SILICON PNP EPITAXIAL TYPE (PCT PROCESS) (DARLINGTON POWER)
HIGH POWER SWITCHING APPLICATIONS. HAMMER DRIVE, PULSE MOTOR DRIV.
2SB674 - SILICON POWER TRANSISTOR
(SavantIC)
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2SB674
DESCRIPTION ·With TO-220C package ·DARLINGTO.
2SB675 - PNP Transistor
(INCHANGE)
isc Silicon PNP Darlington Power Transistor
2SB675
DESCRIPTION ·High DC Current Gain
: hFE= 2000(Min.) @IC= 3.0A ·Low Saturation Voltage
: VCE(sat)=.
2SB675 - Silicon PNP Transistor
(Toshiba)
:
B673
2SB674
2SB675I
SILICON PNP EPITAXIAL TYPE (PCT PROCESS) (DARLINGTON POWER)
HIGH POWER SWITCHING APPLICATIONS. HAMMER DRIVE, PULSE MOTOR DRIV.
