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SSM3J66MFV Silicon P-Channel MOSFET

SSM3J66MFV Description

MOSFETs Silicon P-Channel MOS (U-MOS *) SSM3J66MFV 1.Applications * Load Switches 2..

SSM3J66MFV Features

* (1) AEC-Q101 qualified (Please see the orderable part number list) (2) 1.2-V drive (3) Low drain-source on-resistance : RDS(ON) = 390 mΩ (max) (@VGS = -4.5 V) RDS(ON) = 480 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 660 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 900 mΩ (max) (@VGS = -1.5 V) RDS(ON) = 4000 mΩ (max)

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Silicon P-Channel MOSFET Toshiba
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