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SSM6K804R Datasheet - Toshiba

SSM6K804R - Silicon N-Channel MOSFET

SSM6K804R Features

* (1) AEC-Q101 qualified (Note 1) (2) 175

* MOSFET (3) 4.5-V drive (4) Low drain-source on-resistance : RDS(ON) = 12 mΩ (typ.) (@VGS = 4.5 V) RDS(ON) = 9 mΩ (typ.) (@VGS = 10 V) Note 1: For detail information, please contact our sales. 3. Packaging and Pin Assignment TSOP6F SSM6K804R 1: Drain 2:

SSM6K804R-Toshiba.pdf