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SSM6K819R Datasheet - Toshiba

SSM6K819R Silicon N-Channel MOSFET

SSM6K819R Features

* (1) AEC-Q101 qualified (Please see the orderable part number list) (2) 4.5-V drive (3) Low drain-source on-resistance : RDS(ON) = 25.8 mΩ (typ.) (@VGS = 4.5 V) RDS(ON) = 20.9 mΩ (typ.) (@VGS = 10 V) 3. Packaging and Internal Circuit SSM6K819R 1: Drain 2: Drain 3: Gate 4: Source 5: Drain 6: Drain

SSM6K819R-Toshiba.pdf

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Datasheet Details

Part number:

SSM6K819R

Manufacturer:

Toshiba ↗

File Size:

455.93 KB

Description:

Silicon n-channel mosfet.

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SSM6K819R SSM6K819R Silicon N-Channel MOSFET Toshiba

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