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SSM6K818R Datasheet - Toshiba

SSM6K818R Silicon N-Channel MOSFET

SSM6K818R Features

* (1) AEC-Q101 qualified (Note 1) (2) 4.5-V drive (3) Low drain-source on-resistance : RDS(ON) = 8.0 mΩ (typ.) (@VGS = 4.5 V) RDS(ON) = 6.5 mΩ (typ.) (@VGS = 10 V) Note 1: For detail information, please contact our sales. 3. Packaging and Pin Assignment TSOP6F SSM6K818R 1: Drain 2: Drain 3: Gate 4: S

SSM6K818R-Toshiba.pdf

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Datasheet Details

Part number:

SSM6K818R

Manufacturer:

Toshiba ↗

File Size:

259.72 KB

Description:

Silicon n-channel mosfet.

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SSM6K818R SSM6K818R Silicon N-Channel MOSFET Toshiba

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