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SSM6K810R Datasheet - Toshiba

SSM6K810R - Silicon N-channel MOSFET

SSM6K810R Features

* (1) AEC-Q101 qualified (Note 1) (2) 175  MOSFET (3) 4.5-V drive (4) Low drain-source on-resistance : RDS(ON) = 65 mΩ (typ.) (@VGS = 4.5 V) RDS(ON) = 51 mΩ (typ.) (@VGS = 10 V) Note 1: For detail information, please contact our sales. 3. Packaging and Pin Assignment TSOP6F SSM6K810R 1: Drain 2: Dra

SSM6K810R-Toshiba.pdf

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Datasheet Details

Part number:

SSM6K810R

Manufacturer:

Toshiba ↗

File Size:

243.64 KB

Description:

Silicon n-channel mosfet.

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