SSM6K810R - Silicon N-channel MOSFET

Toshiba

Datasheet Details

(1) AEC-Q101 qualified (Note 1) (2) 175  MOSFET (3) 4.5-V drive (4) Low drain-source on-resistance : RDS(ON) = 65 mΩ (typ. ) (@VGS = 4.5 V) RDS(ON) = 51 mΩ (typ. ) (@VGS = 10 V) Note 1: For detail information, please contact our sales. 3. Packaging and Pin Assignment TSOP6F SSM6K810R 1: Drain 2: Drain 3: Gate 4: Source 5: Drain 6: Drain ©2018-2020 Toshiba Electronic Devices & Storage Corporation 1 Start of commercial production 2019-03 2020-09-24 Rev.4.0 SSM6K810R 4. Absolute Maximum Rating.

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Published: May 9, 2019 |