Datasheet4U Logo Datasheet4U.com

TH58NVG7D2GTA20

128 GBIT (8G x 8-BIT x 2) CMOS NAND E2PROM

TH58NVG7D2GTA20 Features

* Organization Memory cell array Register Page size Block size TH58NVG7D2G 8832  512K  8  2 8832  8 8832 bytes (2M  160 K) bytes

* Modes Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy, Multi Page Program, Multi Block Erase, Multi Page Copy, Multi Page Read

TH58NVG7D2GTA20 General Description

The TH58NVG7D2G is a single 3.3 V 128 Gbit (149,189,296,128 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (8192 + 640) bytes  256 pages  8248 blocks. The device has two 8832-byte static registers which allow program and read data to be transferred be.

TH58NVG7D2GTA20 Datasheet (230.08 KB)

Preview of TH58NVG7D2GTA20 PDF

Datasheet Details

Part number:

TH58NVG7D2GTA20

Manufacturer:

Toshiba ↗

File Size:

230.08 KB

Description:

128 gbit (8g x 8-bit x 2) cmos nand e2prom.
TOSHIBA CONFIDENTIAL TH58NVG7D2GTA20 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 128 GBIT (8G  8 BIT  2) CMOS NAND E2PROM (M.

📁 Related Datasheet

TH58NVG7D2FTA20 128 GBIT (4G x 8-BIT x 4-Bit) CMOS NAND E2PROM (Toshiba)

TH58NVG7T2ELA46 128 GBIT (4G x 8 BIT x 4) CMOS NAND E2PROM (Toshiba)

TH58NVG1S3AFT05 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS (Toshiba Semiconductor)

TH58NVG2S3BTG00 4-Gbit CMOS NAND EPROM (Toshiba)

TH58NVG3D4BTG00 8 GBIT (1024M x 8 BIT) CMOS NAND E2PROM (Toshiba)

TH58NVG3S0HBAI4 8 GBIT (1G x 8 BIT) CMOS NAND E2PROM (Toshiba)

TH58NVG3S0HBAI6 8G-BIT (1G x 8 BIT) CMOS NAND E2PROM (Toshiba)

TH58NVG3S0HTA00 8 GBIT (1G x 8 BIT) CMOS NAND E2PROM (Toshiba)

TH58NVG3S0HTAI0 8 GBIT (1G x 8 BIT) CMOS NAND E2PROM (Toshiba)

TH58NVG4S0FBAID 16 GBIT (2G x 8 BIT) CMOS NAND E2PROM (Toshiba)

TAGS

TH58NVG7D2GTA20 128 GBIT 8-BIT CMOS NAND E2PROM Toshiba

Image Gallery

TH58NVG7D2GTA20 Datasheet Preview Page 2 TH58NVG7D2GTA20 Datasheet Preview Page 3

TH58NVG7D2GTA20 Distributor