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TH58NVG7T2ELA46 128 GBIT (4G x 8 BIT x 4) CMOS NAND E2PROM

TH58NVG7T2ELA46 Description

TOSHIBA CONFIDENTIAL TH58NVG7T2ELA46 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 128 GBIT (4G × 8 BIT x 4) CMOS NAND E2PROM (M.
The TH58NVG7T2E is a single 3.

TH58NVG7T2ELA46 Features

* Organization Memory cell array Register Page size Block size TH58NVG7T2E 8568 × 521.3K × 8 x 4 8568 × 8 8568 bytes (1536K + 70.5K) bytes
* Modes Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy, Multi Page Program, Multi Block Erase,Multi Page Copy, Mullti

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128 GBIT BIT CMOS NAND E2PROM Toshiba
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