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TH58NVG7T2ELA46

128 GBIT (4G x 8 BIT x 4) CMOS NAND E2PROM

TH58NVG7T2ELA46 Features

* Organization Memory cell array Register Page size Block size TH58NVG7T2E 8568 × 521.3K × 8 x 4 8568 × 8 8568 bytes (1536K + 70.5K) bytes

* Modes Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy, Multi Page Program, Multi Block Erase,Multi Page Copy, Mullti

TH58NVG7T2ELA46 General Description

The TH58NVG7T2E is a single 3.3 V 128 Gbit (145,572,102,144bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (8192 + 376) bytes × 192 pages × 2780 blocks × 4. The device has two 8568-byte static registers which allow program and read data to be transferred.

TH58NVG7T2ELA46 Datasheet (611.09 KB)

Preview of TH58NVG7T2ELA46 PDF

Datasheet Details

Part number:

TH58NVG7T2ELA46

Manufacturer:

Toshiba ↗

File Size:

611.09 KB

Description:

128 gbit (4g x 8 bit x 4) cmos nand e2prom.
TOSHIBA CONFIDENTIAL TH58NVG7T2ELA46 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 128 GBIT (4G × 8 BIT x 4) CMOS NAND E2PROM (M.

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TAGS

TH58NVG7T2ELA46 128 GBIT BIT CMOS NAND E2PROM Toshiba

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