* (1) AEC-Q101 qualified (2) Low drain-source on-resistance: RDS(ON) = 1.1 mΩ (typ.) (3) Low leakage current: IDSS = 10 µA (max) (VDS = 40 V) (4) Enhancement mode: Vth = 2.0 to 3.0 V (VDS = 10 V, ID = 0.5 mA) 3. Packaging and Internal Circuit TK1R4S04PB 1: Gate 2: Drain (heatsink) 3: Source DPAK+
TK1R4S04PB Datasheet (471.36 KB)
TK1R4S04PB
471.36 KB
Silicon n-channel mosfet.
MOSFETs Silicon N-channel MOS (U-MOS-H)
TK1R4S04PB
1. Applications
* Automotive
* Motor Drivers
* DC-DC Converters
* .
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