TK290P60Y - Silicon N-Channel MOSFET

Product Overview

Toshiba

Part number	TK290P60Y
Manufacturer	Toshiba
File Size	451.30 KB
Description	Silicon N-Channel MOSFET
Datasheet	TK290P60Y Datasheet
Additional preview pages of the TK290P60Y datasheet.

(1) Low drain-source on-resistance: RDS(ON) = 0.23 Ω (typ. ) by using Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 3 to 4 V (VDS = 10 V, ID = 0.45 mA) 3. Packaging and Internal Circuit 1: Gate 2: Drain 3: Source DPAK 4. Absolute Maximum Ratings (Note) (Ta = 25  unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage VDSS 600 V Gate-source voltage VGSS ±30 Drain current (DC) (Tc = 25 ) (Note 1) ID 11.

📁 Similar Datasheet

TK2019 - STEREO 20W (4OHM) CLASS-T DIGITAL AUDIO AMPLIFIER (Tripath)
TK2050 - STEREO 50W (8OHM) CLASS-T DIGITAL AUDIO AMPLIFIER (Tripath)
TK2051 - STEREO 50W (8ohm) CLASS-T DIGITAL AUDIO AMPLIFIER DRIVER (Tripath Technology)
TK2070 - STEREO 70W (4Ohm) CLASS-T DIGITAL AUDIO AMPLIFIER DRIVER (Tripath Technology)
TK20A - Current Transducer (Topstek)
TK20A60U - N-Channel MOSFET (INCHANGE)
TK20A60W - Silicon N-Channel MOSFET (Toshiba Semiconductor)
TK20A60W5 - Silicon N-Channel MOSFET (Toshiba Semiconductor)

Other Datasheets by Toshiba

Published: Jul 8, 2019 |