TK290P60Y Datasheet - Toshiba

TK290P60Y, Silicon N-Channel MOSFET

MOSFETs Silicon N-Channel MOS (DTMOS) TK290P60Y TK290P60Y 1.Applications * Switching Voltage Regulators 2..

Features

* (1) Low drain-source on-resistance: RDS(ON) = 0.23 Ω (typ. ) by using Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 3 to 4 V (VDS = 10 V, ID = 0.45 mA) 3. Packaging and Internal Circuit 1: Gate 2: Drain 3: Source DPAK 4. Absolute Maximum Ratings (N

TK290P60Y-Toshiba.pdf