TK2R4E08QM - Silicon N-Channel MOSFET

Toshiba

Datasheet Details

(1) High-speed switching (2) Small gate charge: QSW = 52 nC (typ. ) (3) Small output charge: Qoss = 210 nC (typ. ) (4) Low drain-source on-resistance: RDS(ON) = 1.97 mΩ (typ. ) (VGS = 10 V) (5) Low leakage current: IDSS = 10 µA (max) (VDS = 80 V) (6) Enhancement mode: Vth = 2.5 to 3.5 V (VDS = 10 V, ID = 2.2 mA) 3. Packaging and Internal Circuit TK2R4E08QM TO-220 1: Gate 2: Drain (heatsink) 3: Source ©2020-2021 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production.

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Published: Jan 2, 2024 |