Part number:
TK33S10N1H
Manufacturer:
File Size:
264.82 KB
Description:
Silicon n-channel mosfet.
TK33S10N1H Datasheet (264.82 KB)
* (1) Low drain-source on-resistance: RDS(ON) = 8.2 mΩ (typ.) (VGS = 10 V) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 100 V) (3) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 0.5 mA) 3. Packaging and Internal Circuit TK33S10N1H 1: Gate 2: Drain (heatsink) 3: Source DPAK+ 4. Absolu
TK33S10N1H Datasheet (264.82 KB)
TK33S10N1H
264.82 KB
Silicon n-channel mosfet.
📁 Related Datasheet
TK33S10N1L Silicon N-Channel MOSFET (Toshiba)
TK33S10N1Z N-channel MOSFET (Toshiba)
TK30A06J3A MOSFET (Toshiba Semiconductor)
TK30A06N1 Silicon N-Channel MOSFET (Toshiba Semiconductor)
TK30A06N1 N-Channel MOSFET (INCHANGE)
TK30E06N1 Silicon N-Channel MOSFET (Toshiba Semiconductor)
TK30E06N1 N-Channel MOSFET (INCHANGE)
TK30J25D Silicon N-Channel MOSFET (Toshiba Semiconductor)
TK30J25D N-Channel MOSFET (INCHANGE)
TK30S06K3L Silicon N-Channel MOSFET (Toshiba Semiconductor)
