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TK33S10N1H - Silicon N-Channel MOSFET

Toshiba

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Datasheet Details

Part number	TK33S10N1H
Manufacturer	Toshiba ↗
File Size	264.82 KB
Description	Silicon N-Channel MOSFET
Datasheet	TK33S10N1H-Toshiba.pdf

TK33S10N1H Product details

Features

(1) Low drain-source on-resistance: RDS(ON) = 8.2 mΩ (typ. ) (VGS = 10 V) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 100 V) (3) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 0.5 mA) 3. Packaging and Internal Circuit TK33S10N1H 1: Gate 2: Drain (heatsink) 3: Source DPAK+ 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage Gate-source voltage Drain current (DC) Drain current (pulsed) Power dissipa.

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Published: Jan 2, 2024 |