TK33S10N1H Silicon N-Channel MOSFET

Toshiba

Description

MOSFETs Silicon N-channel MOS (U-MOS-H) TK33S10N1H 1.Applications * Switching Voltage Regulators * Motor Drivers 2..

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Datasheet Specifications

Part number: TK33S10N1H
Manufacturer: Toshiba ↗
File Size: 264.82 KB
Datasheet: TK33S10N1H-Toshiba.pdf
Description: Silicon N-Channel MOSFET

Features

* (1) Low drain-source on-resistance: RDS(ON) = 8.2 mΩ (typ. ) (VGS = 10 V) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 100 V) (3) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 0.5 mA) 3. Packaging and Internal Circuit TK33S10N1H 1: Gate 2: Drain (heatsink) 3: Source DPAK+ 4. Absolu

Applications

* Switching Voltage Regulators

TK33S10N1H Distributors

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TK33S10N1H Silicon N-Channel MOSFET Toshiba

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