TK33S10N1Z Datasheet - Toshiba

TK33S10N1Z-Toshiba.pdf

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Datasheet Details

Part number:

TK33S10N1Z

Manufacturer:

Toshiba ↗

File Size:

275.24 KB

Description:

N-channel mosfet.

TK33S10N1Z, N-channel MOSFET

TK33S10N1Z Features

* (1) AEC-Q101 qualified (2) Low drain-source on-resistance: RDS(ON) = 8.2 mΩ (typ.) (VGS = 10 V) (3) Low leakage current: IDSS = 10 µA (max) (VDS = 100 V) (4) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 0.5 mA) 3. Packaging and Internal Circuit TK33S10N1Z 1: Gate 2: Drain (heatsink) 3: S

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TK33S10N1Z N-channel MOSFET Toshiba

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