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1SS377 - Silicon Epitaxial Schottky Barrie Diode

1SS377 Description

TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS377 High Speed Switching 1SS377 Unit: mm z Low forward voltage z Small package : VF = 0.23.

1SS377 Applications

* customers must also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the "TOSHIBA Semiconductor Rel

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📁 Related Datasheet

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Silicon Epitaxial Schottky Barrie Diode Toshiba Semiconductor
Toshiba Semiconductor 1SS377-like datasheet