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1SS379 - Silicon Epitaxial Schottky Barrie Diode

1SS379 Description

TOSHIBA Diode Silicon Epitaxial Planar Type 1SS379 General Purpose Rectifier Applications 1SS379 Unit: mm * AEC-Q101 Qualified (Note1) * Sm.

1SS379 Applications

* 1SS379 Unit: mm
* AEC-Q101 Qualified (Note1)
* Small package : SC-59
* Low forward voltage : VF = 1.0 V (typ. )
* Low reverse current : IR = 0.1 nA (typ. )
* Small total capacitance : CT = 3.0 pF (typ. ) Note1: For detail information, please contact our sales. Absolute Ma

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Silicon Epitaxial Schottky Barrie Diode Toshiba Semiconductor
Toshiba Semiconductor 1SS379-like datasheet