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2SA1213 - Silicon PNP Transistor

2SA1213 Description

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1213 Power Amplifier Applications Power Switching Applications 2SA1213 Unit: mm <.

2SA1213 Features

* document, whether express or implied, by estoppel or otherwise.
* ABSENT A WRITTEN SIGNED AGREEMENT, EXCEPT AS PROVIDED IN THE RELEVANT TERMS AND CONDITIONS OF SALE FOR PRODUCT, AND TO THE MAXIMUM EXTENT ALLOWABLE BY LAW, TOSHIBA (1) ASSUMES NO LIABILITY WHATSOEVER, INCLUDING WITHOUT LIMITAT

2SA1213 Applications

* Power Switching Applications 2SA1213 Unit: mm
* Low saturation voltage: VCE (sat) =
* 0.5 V (max) (IC =
* 1 A)
* High speed switching time: tstg = 1.0 μs (typ. )
* Small flat package
* PC = 1.0 to 2.0 W (mounted on a ceramic substrate)
* Complem

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Silicon PNP Transistor Toshiba Semiconductor
Toshiba Semiconductor 2SA1213-like datasheet