2SA1923 - SILICON PNP TRIPLE DIFFUSED TYPE TRANSISTOR
TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1923 High Voltage Switching Applications 2SA1923 Unit: mm High voltage: VCEO = 400 V Low saturation voltage: VCE (sat) = 1 V (max) (IC = 100 mA, IB = 10 mA) Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current DC Pulse Base current Collector power dissipation Ta = 25°C Tc = 25°C Junction temperat
