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2SD1409A - NPN Transistor

2SD1409A Description

2SD1409A TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington) 2SD1409A High Voltage Switching Applications Industrial Applications Unit: .

2SD1409A Features

* hout limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or

2SD1409A Applications

* Industrial Applications Unit: mm
* High DC current gain: hFE = 600 (min. ) (VCE = 2 V, IC = 2 A) Monolithic construction with built-in base-emitter shunt resistor Absolute Maximum Ratings (Ta = 25°C) Characteristics S Collector-base voltage Collector-emitter voltage Emitter-base v

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NPN Transistor Toshiba Semiconductor
Toshiba Semiconductor 2SD1409A-like datasheet