Datasheet4U Logo Datasheet4U.com

SSM5H11TU Silicon Epitaxial Schottky Barrier Diode

SSM5H11TU Description

SSM5H11TU Silicon N Channel MOS Type (U-MOS )/Silicon Epitaxial Schottky Barrier Diode SSM5H11TU DC-DC Converter Applications * *

SSM5H11TU Features

* S.
* Product is intended for use in general

SSM5H11TU Applications

* 4.0-V drive Combined an N-ch MOSFET and a Schottky barrier diode in one package. Low RDS(ON) and Low VF Unit: mm Absolute Maximum Ratings MOSFET (Ta = 25°C) Characteristic Drain-source voltage Gate-source voltage DC Drain current Pulse Drain power dissipation Channel t

📥 Download Datasheet

Preview of SSM5H11TU PDF
datasheet Preview Page 2 datasheet Preview Page 3

📁 Related Datasheet

  • SSM5H90ATU - Silicon N-Channel MOSFET (Toshiba)
  • SSM5G06FE - Silicon Epitaxial Schottky Barrier Diode (Toshiba)
  • SSM-14L1 - COLOR VIDEO MONITOR SERVICE MANUAL (Sony)
  • SSM-2005 - Decoder 5.1-Channel Soundfield Generator (Analog Devices)
  • SSM-2014 - OPERATIONAL VOLTAGE CONTROLLED ELEMENT (ETC)
  • SSM-2015 - Microphone Preamplifier (PMI)
  • SSM-2016 - Ultra Low Noise Differential Audio Preamplifier (Analog Devices)
  • SSM-2022 - DUAL LINEAR ANTILOG VOLTAGE CONTROLLED AMPLIFIER (ETC)

📌 All Tags

Silicon Epitaxial Schottky Barrier Diode Toshiba Semiconductor
Toshiba Semiconductor SSM5H11TU-like datasheet