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SSM5H14F Silicon Epitaxial Schottky Barrier Diode

SSM5H14F Description

SSM5H14F Silicon N Channel MOS Type (U-MOSⅢ)/Silicon Epitaxial Schottky Barrier Diode SSM5H14F ○ Fuse cut applications of the battery pack * .

SSM5H14F Features

* or incorporated into any products or systems whose manufacture, use, or sale is prohibited un

SSM5H14F Applications

* of the battery pack
* 1.8-V drive An N-ch MOSFET and a Schottky Barrier Diode in one package. Low RDS (ON) and Low VF Unit: mm Absolute Maximum Ratings MOSFET (Ta = 25°C) Characteristic Drain-source voltage Gate-source voltage Drain current Drain power dissipation Channe

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Silicon Epitaxial Schottky Barrier Diode Toshiba Semiconductor
Toshiba Semiconductor SSM5H14F-like datasheet