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TIM5964-35SLA-251 - MICROWAVE POWER GaAs FET

TIM5964-35SLA-251 Description

MICROWAVE POWER GaAs FET www.DataSheet4U.com MICROWAVE SEMICONDUCTOR TECHNICAL DATA .

TIM5964-35SLA-251 Features

* TIM5964-35SLA-251
* LOW INTERMODULATION DISTORTION IM3=-45 dBc at Po= 35.0dBm, Single Carrier Level
* HIGH POWER P1dB=45.5dBm at 5.9GHz to 6.75GHz
* HIGH EFFICIENCY ηadd=39% at 5.9 to 6.75GHz
* HIGH GAIN G1dB=8.5dB at 5.9GHz to 6.75GHz
* BROAD BAND INTERNAL

TIM5964-35SLA-251 Applications

* of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use, No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. The information contained herein is

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MICROWAVE POWER GaAs FET Toshiba Semiconductor
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