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TGF2023-01 - 6 Watt Discrete Power GaN on SiC HEMT

TGF2023-01 Description

TGF2023-01 6 Watt Discrete Power GaN on SiC HEMT Key .
The TriQuint TGF2023-01 is a discrete 1.

TGF2023-01 Features

* Frequency Range: DC - 18 GHz 38 dBm Nominal Psat at 3 GHz 66% Maximum PAE 18 dB Nominal Power Gain at 3 GHz Bias: Vd = 28 - 32 V, Idq = 125 mA, Vg = -3.6 V Typical Technology: 0.25 um Power GaN on SiC Chip Dimensions: 0.82 x 0.66

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Datasheet Details

Part number
TGF2023-01
Manufacturer
TriQuint Semiconductor
File Size
0.96 MB
Datasheet
TGF2023-01_TriQuintSemiconductor.pdf
Description
6 Watt Discrete Power GaN on SiC HEMT

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📌 All Tags

Watt Discrete Power GaN SiC HEMT TriQuint Semiconductor
TriQuint Semiconductor TGF2023-01-like datasheet