TSA9N90M Datasheet - Truesemi

TSA9N90M N-Channel MOSFET

This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices a.

TSA9N90M Features

* 9.0A,900V,Max.RDS(on)=1.40Ω @ VGS =10V

* Low gate charge(typical 52nC)

* High ruggedness

* Fast switching

* 100% avalanche tested

* Improved dv/dt capability Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Parameter Value VDSS

TSA9N90M-Truesemi.pdf