2SD1609 Datasheet, Transistor, UTC

2SD1609 Features

  • Transistor
  • Suit for power amplifier applications
  • ORDERING INFORMATION Ordering Number Lead Free Halogen Free 2SD1609L-T60-K 2SD1609G-T60-K 2SD1609L-T60-T 2SD1609G-T60-T

PDF File Details

Part number:

2SD1609

Manufacturer:

UTC

File Size:

195.50kb

Download:

📄 Datasheet

Description:

Npn transistor. The UTC 2SD1609 are series of NPN silicon planar transistor, and its suited to be used in power amplifier applications.

  • FEA

  • Datasheet Preview: 2SD1609 📥 Download PDF (195.50kb)
    Page 2 of 2SD1609 Page 3 of 2SD1609

    2SD1609 Application

    • Applications
    • FEATURES
    • Suit for power amplifier applications
    • ORDERING INFORMATION Ordering Number Lead Free Haloge

    TAGS

    2SD1609
    NPN
    TRANSISTOR
    UTC

    📁 Related Datasheet

    2SD1600 - NPN Transistor (INCHANGE)
    INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1600 DESCRIPTION ·High DC Current Gain- : hFE = 1000(Min)@ IC= 4A ·Collector-.

    2SD1601 - Power Transistor (Inchange Semiconductor)
    isc Silicon NPN Darlington Power Transistor 2SD1601 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·High DC Current Gain : h.

    2SD1602 - Power Transistor (Inchange Semiconductor)
    isc Silicon NPN Darlington Power Transistor 2SD1602 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·High DC Current Gain : h.

    2SD1603 - Silicon NPN Darlington Power Transistor (Inchange Semiconductor Company)
    isc Silicon NPN Darlington Power Transistor 2SD1603 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·High DC Current Gain : h.

    2SD1603 - NPN Transistor (Hitachi Semiconductor)
    .. .. .

    2SD1604 - NPN Transistor (Hitachi Semiconductor)
    .. .. .

    2SD1604 - Power Transistor (Inchange Semiconductor)
    isc Silicon NPN Darlington Power Transistor 2SD1604 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·High DC Current Gain : h.

    2SD1605 - Power Transistor (Inchange Semiconductor)
    isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) ·High DC Current Gain : hFE= 1000.

    2SD1606 - Silicon NPN Transistor (Hitachi Semiconductor)
    2SD1606 Silicon NPN Triple Diffused Application Low frequency power amplifier Outline TO-220AB 2 1 1. Base 2. Collector (Flange) 3. Emitter ID 2.6.

    2SD1606 - Silicon NPN Power Transistor (Inchange Semiconductor)
    isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) ·High DC Current Gain : hFE= 1000.

    Stock and price

    part
    Hitachi Ltd
    TRANSISTOR,BJT,NPN,160V V(BR)CEO,100MA I(C),TO-126
    Quest Components
    2SD1609
    461 In Stock
    Qty : 129 units
    Unit Price : $3.6
    Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts