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SI8487DB P-Channel MOSFET

SI8487DB Description

www.vishay.com Si8487DB Vishay Siliconix P-Channel 30 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) -30 RDS(on) () MAX.0.031 at VGS = -10 V 0.035 at V.

SI8487DB Features

* TrenchFET® power MOSFET
* Low-on resistance
* Ultra-small 1.6 mm x 1.6 mm maximum outline
* Ultra-thin 0.6 mm maximum height
* Pin compatible to Si8409DB
* Material categorization: for definitions of compliance please see www. vishay. com/doc?99912 AP

SI8487DB Applications

* Mobile computing, smart phones, tablet PCs - Load switch - Battery switch - Charger switch - OVP switch S G D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °

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P-Channel MOSFET Vishay
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