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SI8489EDB P-Channel MOSFET

SI8489EDB Description

www.vishay.com Si8489EDB Vishay Siliconix P-Channel 20 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) -20 RDS(on) (Ω) MAX.0.044 at VGS = -10 V 0.054 at .

SI8489EDB Features

* TrenchFET® power MOSFET
* Small 1 mm x 1 mm max. outline area
* Low 0.548 mm max. profile
* Typical ESD protection 2500 V HBM

SI8489EDB Applications

* S
* Load switches and charger switches
* Battery management
* For smart phones and tablet PCs G D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage Gate-Source Voltage Continuous Drain Curren

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