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SI8402DB - N-Channel MOSFET

SI8402DB Description

20 V N-Channel 1.8 V (G-S) MOSFET Si8402DB Vishay Siliconix PRODUCT SUMMARY VDS (V) 20 RDS(on) () 0.037 at VGS = 4.5 V 0.039 at VGS = 2.5 V 0.043.

SI8402DB Features

* TrenchFET® Power MOSFET
* MICRO FOOT® Chipscale Packaging Reduces Footprint Area Profile (0.62 mm) and On-Resistance Per Footprint Area

SI8402DB Applications

* PA, Battery and Load Switch for D Portable Devices G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol 5s Steady State Unit Drain-Source Voltage Gate-Source Voltage VDS 20 V VGS ±8 Continuous Drain Current (TJ = 150 °C)a Pul

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N-Channel MOSFET Vishay Siliconix
Vishay Siliconix SI8402DB-like datasheet