WNMD2180 Datasheet - WillSEMI

WNMD2180 MOSFET

The WNMD2180 is Dual N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC conversion, power switch and charging circuit. Standard Product WNMD2180 is Pb-free and Hal.

WNMD2180 Features

* Trench Technology

* Supper high density cell design

* Excellent ON resistance for higher DC current

* Extremely Low Threshold Voltage

* Small package PDFN3×3-8L Applications

* Driver for Relay, Solenoid, Motor, LED etc.

* DC-DC converter circuit

* Power Switch

WNMD2180-WillSEMI.pdf

WNMD2180 Datasheet Preview — Preview of WNMD2180 PDF

Datasheet Details

Part number:

WNMD2180

Manufacturer:

WillSEMI

File Size:

2.27 MB

Description:

Mosfet.

📁 Related Datasheet

WNMD2182 MOSFET (WillSEMI)

WNMD2153 Dual N-Channel MOSFET (Will Semiconductor)

WNMD2154 Dual N-Channel MOSFET (Will Semiconductor)

WNMD2155 Dual N-Channel MOSFET (Will Semiconductor)

WNMD2156 Dual N-Channel MOSFET (Will Semiconductor)

WNMD2157 Dual N-Channel MOSFET (Will Semiconductor)

WNMD2158 Dual N-Channel MOSFET (Will Semiconductor)

WNMD2160 Dual N-Channel MOSFET (Will Semiconductor)

TAGS

WNMD2180 WNMD2180 MOSFET WillSEMI

WNMD2180 Distributor