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WNMD2180 MOSFET

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Description

WNMD2180 Dual N-Channel, 20V, 11A, Power MOSFET VDS (V) 20 Typical Rds(on) (mΩ) 8.5@ VGS=4.5V 8.9@ VGS=3.8V 9.6@ VGS=3.1V 11@ VGS=2.5V ESD Protecte.
The WNMD2180 is Dual N-Channel enhancement MOS Field Effect Transistor.

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Datasheet Specifications

Part number
WNMD2180
Manufacturer
WillSEMI
File Size
2.27 MB
Datasheet
WNMD2180-WillSEMI.pdf
Description
MOSFET

Features

* Trench Technology
* Supper high density cell design
* Excellent ON resistance for higher DC current
* Extremely Low Threshold Voltage

Applications

* Driver for Relay, Solenoid, Motor, LED etc.
* DC-DC converter circuit
* Power Switch
* Load Switch
* Charging WNMD2180 Http://www. sh-willsemi. com PDFN3×3-8L    Pin configuration (Top view) 87 65 2180 NDYW 1 234 2180 ND Y W = Device Code = Special Code = Year = Week Mark

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