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WNMD2180

MOSFET

WNMD2180 Features

* Trench Technology

* Supper high density cell design

* Excellent ON resistance for higher DC current

* Extremely Low Threshold Voltage

* Small package PDFN3×3-8L Applications

* Driver for Relay, Solenoid, Motor, LED etc.

* DC-DC converter circuit

* Power Switch

WNMD2180 General Description

The WNMD2180 is Dual N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC conversion, power switch and charging circuit. Standard Product WNMD2180 is Pb-free and Hal.

WNMD2180 Datasheet (2.27 MB)

Preview of WNMD2180 PDF

Datasheet Details

Part number:

WNMD2180

Manufacturer:

WillSEMI

File Size:

2.27 MB

Description:

Mosfet.
WNMD2180 Dual N-Channel, 20V, 11A, Power MOSFET VDS (V) 20 Typical Rds(on) (mΩ) 8.5@ VGS=4.5V 8.9@ VGS=3.8V 9.6@ VGS=3.1V 11@ VGS=2.5V ESD Protecte.

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WNMD2180 MOSFET WillSEMI

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