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WNMD2178

MOSFET

WNMD2178 Features

* Trench Technology

* Supper high density cell design

* Excellent ON resistance for higher DC current

* Extremely Low Threshold Voltage

* Small package DFN2X2-4L 34 2 1 Bottom View DFN2X2-4L 43 S2 G2 2178 NDYW S1 G1 12 4: Source 2 3: Gate 2 1: Source 1 2: Gate 1 2178 = Device Co

WNMD2178 General Description

The WNMD2178 is Dual N-Channel enhancement MOS Field Effect Transistor and connecting the Drains on the circuit board is not required because the Drains of the MOSFET1 and the MOSFET2 are internally connected. Uses advanced trench technology and design to provide excellent RSS(ON) with low gate ch.

WNMD2178 Datasheet (1.51 MB)

Preview of WNMD2178 PDF

Datasheet Details

Part number:

WNMD2178

Manufacturer:

WillSEMI

File Size:

1.51 MB

Description:

Mosfet.
WNMD2178 WNMD2178 Dual N-Channel, 20V, 6A, Power MOSFET www.sh-willsemi.com Vsss (V) Typ Rss(on) (mΩ) 23.5@ VGS=4.5V 24@ VGS=4.0V 20 26@ VGS=3..

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WNMD2178 MOSFET WillSEMI

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