* Trench Technology
* Supper high density cell design
* Excellent ON resistance
* Extremely Low Threshold Voltage
* Small package SOT-23-6L Applications SOT-23-6L D1 S1 D2 6 54 1 23 G1 S2 G2 Pin configuration (Top view) 6 54 2176 NDYW 1 23 2176 ND Y W = Device Code = Special
WNMD2176 Datasheet (675.62 KB)
WNMD2176
WillSEMI
675.62 KB
Mosfet.
WNMD2176
Dual N-Channel, 20V, 2.6A, Power MOSFET
WNMD2176
www.sh-willsemi.com
VDS (V)
Typical RDS(on) (mΩ)
20 56@ VGS=4.5V 76@ VGS=2.5V
ESD Protec.
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