WNMD2172 Datasheet - Will Semiconductor

WNMD2172 Dual N-Channel MOSFET

Rds(on) (Ω) 0.015@ VGS=4.5V 0.0155@ VGS=4.0V 0.017@ VGS=3.1V 0.018@ VGS=2.5V 0.021@ VGS=1.8V The WNMD2172 is Dual N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC.

WNMD2172 Features

* WNMD2172 Http//:www.sh-willsemi.com TSSOP-8L D1/D2 S2 S2 G2 8 76 5 12 34 D1/D2 S1 S1 G1 Pin configuration (Top view) 87 65

* Trench Technology

* Supper high density cell design

* Excellent ON resistance for higher DC current

* Extremely Low Threshold Voltage

* Small package TSS

WNMD2172-WillSemiconductor.pdf