Description
Rds(on) (Ω) 0.015@ VGS=4.5V 0.0155@ VGS=4.0V 0.017@ VGS=3.1V 0.018@ VGS=2.5V 0.021@ VGS=1.8V
The WNMD2172 is Dual N-Channel enhancement MOS Field Effect Transistor.Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge.This device is suitable for use in DC-DC conversion, power switch and charging circuit.Standard Product WNMD2172 is Pb-free and Halogen-free.
Features
- WNMD2172
Http//:www. sh-willsemi. com
TSSOP-8L
D1/D2 S2 S2 G2 8 76 5
12 34 D1/D2 S1 S1 G1
Pin configuration (Top view) 87 65.
- Trench Technology.
- Supper high density cell design.
- Excellent ON resistance for higher DC current.
- Extremely Low Threshold Voltage.
- Small package TSSOP-8L.
WNMD2172-WillSemiconductor.pdf
