* TSOT-23-6L G1 D1/D2 G2 654 1 23 S1 D1/D2 S2 Pin configuration (Top view) 6 54
* Trench Technology
* Supper high density cell design
* Excellent ON resistance for higher DC current
* Extremely Low Threshold Voltage
* Small package TSOT-23-6L Applications
* Driver for Relay,
WNMD2179
Will Semiconductor
1.39 MB
Dual n-channel mosfet.
WNMD2179 WNMD2179 Dual N-Channel, 20V, 6.3A, Power MOSFET www.sh-willsemi.com VDS (V) Rds(on) (ȍ) 0.0175@ VGS=4.5V 0.0195@ VGS=3.1V 20 0.0215@ .
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