WNMD2174 Datasheet - Will Semiconductor

WNMD2174 Dual N-Channel MOSFET

The WNMD2174 is Dual N-Channel enhancement MOS Field Effect Transistor and connecting the Drains on the circuit board is not required because the Drains of the MOSFET1 and the MOSFET2 are internally connected. Uses advanced trench technology and design to provide excellent RSS(ON) with low gate ch.

WNMD2174 Features

* Trench Technology

* Supper high density cell design

* Excellent ON resistance for higher DC current

* Extremely Low Threshold Voltage

* Small package CSP 4L Applications

* Lithium-Ion battery p

WNMD2174-WillSemiconductor.pdf