WNMD2174

Dual N-Channel MOSFET

Will Semiconductor

WNMD2174 Features

* Trench Technology

* Supper high density cell design

* Excellent ON resistance for higher DC current

* Extremely Low Threshold Voltage

* Small package CSP 4L Applications

* Lithium-Ion battery p

WNMD2174 General Description

The WNMD2174 is Dual N-Channel enhancement MOS Field Effect Transistor and connecting the Drains on the circuit board is not required because the Drains of the MOSFET1 and the MOSFET2 are internally connected. Uses advanced trench technology and design to provide excellent RSS(ON) with low gate ch.

WNMD2174 Datasheet (1.55 MB)

WNMD2174 Datasheet Preview — Preview of WNMD2174 PDF

Datasheet Details

Part number:

WNMD2174

Manufacturer:

Will Semiconductor

File Size:

1.55 MB

Description:

Dual n-channel mosfet.
WNMD2174 Dual N-Channel, 12V, 6A, Power MOSFET Vsss (V) Typ Rss(on) (mΩ) 19@ VGS=4.5V 20@ VGS=4.0V 12 22@ VGS=3.1V 25@ VGS=2.5V ESD Rating:2000.

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WNMD2174 Dual N-Channel MOSFET Will Semiconductor

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WNMD2174 Features

WNMD2174 General Description

Datasheet Details

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