* Trench Technology
* Supper high density cell design
* Excellent ON resistance for higher DC current
* Extremely Low Threshold Voltage
* Small package CSP 4L WNMD2171 www. sh-willsemi.com MOSFET1 Gate 1 MOSFET2 Gate 2 Gate Protection Diode Source 1 Body Diode CSP 4L Sou
WNMD2171
Will Semiconductor
1.93 MB
Dual n-channel mosfet.
WNMD2171
Dual N-Channel, 20V, 6A, Power MOSFET
Vsss (V)
Typ Rss(on) (mΩ)
36@ VGS=4.5V
38@ VGS=4.0V 20
41@ VGS=3.1V
43@ VGS=2.5V
ESD Rating:2000.
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