WNMD2171 Datasheet - Will Semiconductor

WNMD2171 Dual N-Channel MOSFET

The WNMD2171 is Dual N-Channel enhancement MOS Field Effect Transistor and connecting the Drains on the circuit board is not required because the Drains of the MOSFET1 and the MOSFET2 are internally connected. Uses advanced trench technology and design to provide excellent RSS(ON) with low gate ch.

WNMD2171 Features

* Trench Technology

* Supper high density cell design

* Excellent ON resistance for higher DC current

* Extremely Low Threshold Voltage

* Small package CSP 4L WNMD2171 www. sh-willsemi.com MOSFET1 Gate 1 MOSFET2 Gate 2 Gate Protection Diode Source 1 Body Diode CSP 4L Sou

WNMD2171 Datasheet (1.93 MB)