Description
The WNMD2171 is Dual N-Channel enhancement MOS Field Effect Transistor and connecting the Drains on the circuit board is not required because the Drains of the MOSFET1 and the MOSFET2 are internally connected.
Features
- Trench Technology.
- Supper high density cell design.
- Excellent ON resistance for higher DC current.
- Extremely Low Threshold Voltage.
- Small package CSP 4L
WNMD2171
www. sh-willsemi. com
MOSFET1 Gate 1
MOSFET2 Gate 2
Gate Protection Diode
Source 1
Body Diode
CSP 4L
Source 2
43
71 YW
12
1: Source 1 2: Gate 1 3: Gate 2 4:.
WNMD2171-WillSemiconductor.pdf
