WNMD2158 Datasheet - Will Semiconductor

Dual N-Channel MOSFET

WNMD2158 Features

* z Trench Technology z Supper high density cell design z Excellent ON resistance for higher DC current z Extremely Low Threshold Voltage z Small package TSSOP-8L 1234 D1/D2 S1 S1 G1 Pin configuration (Top view) 8765 2158 YYWW Applications z Driver for Relay, Solenoid, Motor, LED etc. z DC-DC conver

WNMD2158 General Description

TSSOP-8L D1/D2 S2 S2 G2 8765 The WNMD2158 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC conversion, power switch and charging circuit. Standard Product W.

WNMD2158 Datasheet (766.32 KB)

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Datasheet Details

Part number:

WNMD2158

Manufacturer:

Will Semiconductor

File Size:

766.32 KB

Description:

Dual n-channel mosfet.
WNMD2158 Dual N-Channel, 20V, 7.0A, Power MOSFET VDS (V) Rds(on) (ȍ) 0.0148@ VGS=4.5V 0.017@ VGS=3.1V 20 0.019@ VGS=2.5V ESD Rating: 2000V HBM .

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WNMD2158 Dual N-Channel MOSFET Will Semiconductor

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WNMD2158 Features

WNMD2158 General Description

Datasheet Details

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