WNMD2155

Dual N-Channel MOSFET

Will Semiconductor

WNMD2155 Features

* z Trench Technology 1 234 S1 G1 S2 G2 Pin configuration (Top view) 8 7 65 z Supper high density cell design z Excellent ON resistance for higher DC current z Extremely Low Threshold Voltage z Small package SOP-8L Applications z Driver for Relay, Solenoid, Motor, LED etc. z DC-DC converter circuit

WNMD2155 General Description

The WNMD2155 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC conversion, power switch and charging circuit. Standard Product WNMD2155 is Pb-free. SOP-8L D1 .

WNMD2155 Datasheet (383.36 KB)

WNMD2155 Datasheet Preview — Preview of WNMD2155 PDF

Datasheet Details

Part number:

WNMD2155

Manufacturer:

Will Semiconductor

File Size:

383.36 KB

Description:

Dual n-channel mosfet.
WNMD2155 WNMD2155 Dual N-Channel, 20V, 7.9A, Power MOSFET Http//:www.willsemi.com VDS (V) Rds(on) (ȍ) 0.018@ VGS=10V 0.020@ VGS=4.5V 20 0.02.

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WNMD2155 Dual N-Channel MOSFET Will Semiconductor

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WNMD2155 Features

WNMD2155 General Description

Datasheet Details

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