WNMD2155 Datasheet - Will Semiconductor

WNMD2155 Dual N-Channel MOSFET

The WNMD2155 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC conversion, power switch and charging circuit. Standard Product WNMD2155 is Pb-free. SOP-8L D1 .

WNMD2155 Features

* z Trench Technology 1 234 S1 G1 S2 G2 Pin configuration (Top view) 8 7 65 z Supper high density cell design z Excellent ON resistance for higher DC current z Extremely Low Threshold Voltage z Small package SOP-8L Applications z Driver for Relay, Solenoid, Motor, LED etc. z DC-DC converter circuit

WNMD2155-WillSemiconductor.pdf