* G1 D1/D2 65 G2 4 1 23 S1 D1/D2 S2 Pin configuration (Top view) z Trench Technology z Supper high density cell design z Excellent ON resistance for higher DC current z Extremely Low Threshold Voltage z Small package SOT-23-6L Applications 6 54 2157 YYWW 1 23 2157 YY WW = Device Code = Year =
WNMD2157 Datasheet (203.02 KB)
WNMD2157
Will Semiconductor
203.02 KB
Dual n-channel mosfet.
WNMD2157 Dual N-Channel, 20V, 5.4A, Power MOSFET VDS (V) 20 Rds(on) (ȍ) 0.019@ VGS=4.5V 0.024@ VGS=2.5V 0.034@ VGS=1.8V WNMD2157 Http//:www.willse.
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