Description
Package
The WNMD2157 is N-Channel enhancement MOS Field Effect Transistor.Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge.This device is suitable for use in DC-DC conversion, power switch and charging circuit.Standard Product WNMD2157 is Pb-free and Halogen-free.
Features
- G1 D1/D2 65
G2 4
1 23 S1 D1/D2 S2
Pin configuration (Top view)
z Trench Technology z Supper high density cell design z Excellent ON resistance for higher DC current z Extremely Low Threshold Voltage z Small package SOT-23-6L.
WNMD2157-WillSemiconductor.pdf
