WNMD2157 Datasheet - Will Semiconductor

WNMD2157 Dual N-Channel MOSFET

Package The WNMD2157 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC conversion, power switch and charging circuit. Standard Product WNMD2157 is Pb-free an.

WNMD2157 Features

* G1 D1/D2 65 G2 4 1 23 S1 D1/D2 S2 Pin configuration (Top view) z Trench Technology z Supper high density cell design z Excellent ON resistance for higher DC current z Extremely Low Threshold Voltage z Small package SOT-23-6L Applications 6 54 2157 YYWW 1 23 2157 YY WW = Device Code = Year =

WNMD2157-WillSemiconductor.pdf