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PBSS4021PZ PNP transistor

PBSS4021PZ Description

PBSS4021PZ 20 V, 6.6 A PNP low VCEsat (BISS) transistor Rev.01 * 31 March 2010 Product data sheet 1.Product profile 1.1 General descripti.
PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) medium power Surface-Mounted Device (SMD) plastic package.

PBSS4021PZ Features

* Very low collector-emitter saturation voltage VCEsat
* High collector current capability IC and ICM
* High collector current gain (hFE) at high IC
* High energy efficiency due to less heat generation
* AEC-Q101 qualified
* Smaller required Printed-Ci

PBSS4021PZ Applications

* Loadswitch
* Battery-driven devices
* Power management
* Charging circuits
* Power switches (e. g. motors, fans) 1.4 Quick reference data Table 1. Symbol VCEO IC ICM RCEsat Quick reference data Parameter Conditions collector-emitter voltage open base c

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