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PE30P12S P-Channel Enhancement Mode Power MOSFET

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Description

PE30P12S P-Channel Enhancement Mode Power MOSFET .
The PE30P12S uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.

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Datasheet Specifications

Part number
PE30P12S
Manufacturer
semi one
File Size
722.61 KB
Datasheet
PE30P12S-semione.pdf
Description
P-Channel Enhancement Mode Power MOSFET

Features

* VDS = -30V,ID = -12A RDS(ON) < 25mΩ @ VGS=-4.5V RDS(ON) < 16mΩ @ VGS=-10V Schematic diagram
* High Power and current handing capability
* Lead free product is acquired

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