PE30P80K - P-Channel Enhancement Mode Power MOSFET
PE30P80K Features
* VDS =-30V,ID =-80A RDS(ON) < 5.5mΩ @ VGS=-10V D G S Schematic diagram
* High density cell design for ultra low Rdson
* Fully characterized avalanche voltage and current
* Good stability and uniformity with high EAS
* Excellent package for good heat dissipation
* Special p
