PE30P80K Datasheet PDF - semi one P-Channel Enhancement Mode Power MOSFET Specs

PE30P80K - P-Channel Enhancement Mode Power MOSFET

Datasheet Summary

Description

The PE30P80K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Features

VDS =-30V,ID =-80A RDS(ON) < 5.5mΩ @ VGS=-10V D G S Schematic diagram.
High density cell design for ultra low Rdson.
Fully characterized avalanche voltage and current.
Good stability and uniformity with high EAS.
Excellent package for good heat dissipation.
Special process technology for high ESD capability.

Datasheet Details

Part number	PE30P80K
Manufacturer	semi one
File Size	933.87 KB
Description	P-Channel Enhancement Mode Power MOSFET
Datasheet	PE30P80K Datasheet
Additional preview pages of the PE30P80K datasheet.

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Full PDF Text Transcription

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PE30P80K P-Channel Enhancement Mode Power MOSFET Description The PE30P80K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =-30V,ID =-80A RDS(ON) < 5.

Published: Dec 3, 2018 |