PE8910 N-Channel Enhancement Mode Power MOSFET

semi one

Description

PE8910 N-Channel Enhancement Mode Power MOSFET .
The PE8910 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.

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Datasheet Specifications

Part number: PE8910
Manufacturer: semi one
File Size: 211.54 KB
Datasheet: PE8910-semione.pdf
Description: N-Channel Enhancement Mode Power MOSFET

Features

* VDS = 30V,ID =11A RDS(ON) < 10m Ω@ V GS=10V RDS(ON) < 14m Ω@ VGS=4.5V ESD Rating: 2000V HBM
* High power and current handing capability
* Lead free product is acquired

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PE8910 N-Channel Enhancement Mode Power MOSFET semi one

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